5? features high input sensitivity i ft =1.3 ma 600/700/800 v blocklng voltage 300 ma on-state current high static dv/dt 10,000 v/ m sec., typical inverse parallel scrs provide commutating dv/dt >10 kv/ m sec very low leakage <10 m a isolation test voltage from double molded package 5300 vac rms package, 6-pln dip underwriters lab file #e52744 description the il421x consists of an algaas irled optically coupled to a pair of photosensitive non-zero crossing scr chips and are connected inversely parallel to form a triac. these three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high insulation double molded, over/under lead- frame construction. high input sensitivity is achieved by using an emitter follower phototransistor and a cascaded scr pre- driver resulting in an led trigger current of less than 1.3 ma (dc). the il421x uses two discrete scrs resulting in a commutating dv/dt of greater than 10kv/ m s. the use of a proprietary dv/dt clamp results in a static dv/dt of greater than 10kv/ m s. this clamp circuit has a mos- fet that is enhanced when high dv/dt spikes occur between mt1 and mt2 of the triac. the fet clamps the base of the phototransistor when conducting, dis- abling the internal scr predriver. the blocking voltage of up to 800 v permits control of off-line voltages up to 240 vac, with a safety factor of more than two, and is suf?ient for as much as 380 vac. current handling capability is up to 300 ma rms, continuous at 25 c. the il421x isolates low-voltage logic from 120, 240, and 380 vac lines to control resistive inductive, or capacitive loads including motors solenoids, high cur- rent thyristors or triac and relays. applications include solid-state relays, industrial con- trols, of?e equipment, and consumer appliances. maximum ratings emitter reverse voltage ...................................................................................6 v forward current ..............................................................................60 ma surge current ....................................................................................2.5 a power dissipation.........................................................................100 mw derate linearly from 25 c ......................................................1.33 mw/ c thermal resistance....................................................................750 c/w detector peak off-state voltage il4216 ...........................................................................................600 v IL4217 ...........................................................................................700 v il4218 ...........................................................................................800 v rms on-state current...................................................................300 ma single cycle surge...............................................................................3 a total power dissipation ................................................................500 mw derate linearly from 25 c ........................................................6.6 mw/ c thermal resistance.....................................................................150 c/w package isolation test voltage........................................................... 5300 vac rms storage temperature......................................................?5 c to +150 c operating temperature ..................................................?5 c to +100 c lead soldering temperature................................................ 260 c/5 sec. isolation resistance v io =500 v, t a =25 c ................................................................. 3 10 12 w v io =500 v, t a =100 c ............................................................... 3 10 11 w dimensions in inches (mm) .010 (.25) .014 (.35) .110 (2.7 9) .150 (3.8 1) .130 (3.30) .150 (3.81) .020 (.051) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) . 248 (6.30) . 256 (6.50) .335 (8.50) .343 (8.70) pin one id. 6 5 4 1 2 3 18 typ. .300 (7.62) .347 (8.82) 4 typ. 1 2 3 6 5 4 triac anode 1 triac anode 2 substra te do not connec t led anode led cathode nc 600 v il4216 700 v IL4217 800 v il4218 triac driver optocoupler
5? il4216/4217/4218 figure 1. led forward current vs. forward voltage figure 2. forward voltage versus forward current characteristics (t a =25 c) parameter symbol min. typ. max. unit condition emitter forward voltage v f 1.3 1.5 v i f =20 ma breakdown voltage v br 630 vi r =10 ma reverse current i r 0.1 10 m av r =6 v capacitance c o 40 pf v f =o v, f=1 mhz thermal resistance, junction to lead r thjl 750 c/w output detector repetitive peak off-state voltage il4216 IL4217 il4218 v drm v drm v drm 600 700 800 650 750 850 v v v i drm =100 m a i drm =100 m a i drm =100 m a off-state voltage il4216 IL4217 il4218 v d(rms) v d(rms) v d(rms) 424 484 565 460 536 613 v v v i d(rms) =70 m a i d(rms) =70 m a i d(rms) =70 m a off-state current i d(rms) 10 100 m av d =600 v, t a =100 c reverse current i r(rms) 10 100 m av r =600 v, t a =100 c on-state voltage v tm 1.7 3 v i t =300 ma on-state current i tm 300 ma pf=1.0, v t(rms) =1.7 v surge (non-repetitive) on-state current i tsm 3 a f=50 hz holding current i h 65 200 m av t =3 v latching current i l 5mav t =2.2 v led trigger current i ft 0.7 1.3 ma v ak =5 v turn-on time t on 35 m sv rm =v dm =424 vac turn-off time t off 50 m s pf=1.0, i t =300 ma critical state of rise: off-state voltage dv (mt) /dt 10,000 2000 v /m s v /m s v rm , v dm =400 vac, t a =25 c v rm , v dm =400 vac, t a =25 c commutating voltage dv (com) /dt 10,000 2000 v /m s v /m s v rm , v dm =400 vac, t a =25 c v rm , v dm =400 vac, t a =25 c off-state current di/dt 100 a/ms i t =300 ma thermal resistance, junction to lead r thjl 150 c/w package critical rate of rise of coupled input-output voltage dv (io) /dt 5000 v/ m si t =0 a, v rm =v dm =300 vac common mode coupling capacitor c cm 0.01 pf package capacitance c io 0.8 pf f=1 mhz, v io =0 v
5? il4216/4217/4218 figure 3. peak led current vs. duty factor, tau figure 4. maximum led power dissipation figure 5. on-state terminal voltage vs. terminal current figure 6. maximum output power dissipation power factor considerations a snubber isn t needed to eliminate false operation of the triac driver because of the il411 s high static and commutat- ing dv/dt with loads between 1 and 0.8 power factors. when inductive loads with power factors less than 0.8 are being driven, include a rc snubber or a single capacitor directly across the device to damp the peak commutating dv/dt spike. normally a commutating dv/dt causes a turning-off device to stay on due to the stored energy remaining in the turning-off device. but in the case of a zero voltage crossing optotriac, the com- mutating dv/dt spikes can inhibit one half of the triac from turning on. if the spike potential exceeds the inhibit voltage of the zero cross detection circuit, half of the triac will be held- off and not turn-on. this hold-off condition can be eliminated by using a snubber or capacitor placed directly across the optotriac as shown in figure 7. note that the value of the capacitor increases as a function of the load current. the hold-off condition also can be eliminated by providing a higher level of led drive current. the higher led drive pro- vides a larger photocurrent which causer. the phototransistor to turn-on before the commutating spike has activated the zero cross network. figure 8 shows the relationship of the led drive for power factors of less than 1.0. the curve shows that if a device requires 1.5 ma for a resistive load, then 1.8 times (2.7 ma) that amount would be required to control an inductive load whose power factor is less than 0.3. figure 7. shunt capacitance versus load current versus power factor figure 8. normalized led trigger current versus power factor
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